Power Master Semiconductor Launches 1200 V SiC MOSFET for Energy Storage Solutions
Power Master Semiconductor Unveils Second-Generation 1200V eSiC MOSFET: Driving Efficiency and Sustainability in Power Electronics
BonChip Electronics, a trusted distributor of Power Master Semiconductor's innovative power devices, is excited to announce the release of the second generation (Gen2) of their 1200V eSiC MOSFET. This groundbreaking advancement signifies Power Master's commitment to developing cutting-edge solutions that enhance efficiency and sustainability within the power electronics industry.
Empowering Next-Gen Power Systems with Superior Performance
The 1200V eSiC MOSFET Gen2 is specifically designed to address the growing demand for increased efficiency, high power density, and robust reliability in various applications:
- DC EV Charging Stations
- Solar Inverters
- Energy Storage Systems (ESS)
- Motor Drives
- Industrial Power Supplies
Key Benefits for a Greener Future
The 1200V eSiC MOSFET Gen2 offers significant advantages over traditional silicon (Si) MOSFETs, paving the way for a more sustainable future:
- Enhanced Efficiency: Significantly lower power losses translate to improved overall system efficiency, reducing energy consumption and environmental impact.
- Increased Power Density: The eSiC MOSFET Gen2 enables the development of smaller, lighter, and more efficient power systems, minimizing space requirements and material usage.
- Reduced Cooling Needs: Lower power losses result in less heat generation, minimizing the need for bulky and energy-intensive cooling solutions.
Ideal for Renewable Energy and EV Charging Applications
The 1200V eSiC MOSFET Gen2 is a perfect fit for applications demanding exceptional efficiency and power density, particularly within the renewable energy and electric vehicle sectors:
- DC EV Charging Stations: Faster charging times and support for larger battery capacities become achievable with the increased power density capabilities of the eSiC MOSFET Gen2.
- Solar Inverters: Enhanced efficiency translates to maximized energy output from solar panels, contributing to a cleaner energy future.
Technological Advancements for Superior Performance
Power Master Semiconductor has prioritized key performance improvements in the eSiC MOSFET Gen2:
- Up to 30% Improvement in Key FOMs: The Gen2 boasts significant advancements in critical figures of merit (FOMs), including gate charge (QG), stored energy (EOSS), reverse recovery charge (QRR), and output charge (QOSS), compared to the previous generation.
- Exceptional Switching Performance: The eSiC MOSFET Gen2 delivers outstanding switching performance, thoroughly tested for avalanche capability.
- Remarkable Reduction in Switching Loss: By significantly minimizing miller capacitance, the Gen2 achieves a remarkable 44% reduction in switching loss compared to its predecessor, further enhancing overall system efficiency.
Power Master Semiconductor is confident that the 1200V eSiC MOSFET Gen2 will significantly impact high-performance applications across various industries.
Contact BonChip Electronics today to learn more about the Power Master Semiconductor 1200V eSiC MOSFET Gen2 and explore how it can elevate the performance and efficiency of your next power electronics design.
