Toshiba Launches New 650V N-Channel Power MOSFETs for Use in Solar Power Generators
Toshiba Electronics Unveils High-Performance 650V N-Channel Power MOSFETs for Demanding Switching Power Supplies
BonChip Electronics, a leading distributor of innovative power electronics solutions, is excited to announce the availability of Toshiba Electronics' groundbreaking new line of 650V N-channel power MOSFETs. These cutting-edge devices, the TK042N65Z5 and TK095N65Z5, represent the first high-speed diode (HSD) type products within Toshiba's latest-generation DTMOS VI series. Offered in the TO-247 package, these MOSFETs are specifically designed to excel in demanding switching power supply applications such as data centers and power conditioners for photovoltaic (PV) generators.
Unveiling the Power of DTMOS VI with Super Junction Technology
The TK042N65Z5 and TK095N65Z5 leverage Toshiba's advanced DTMOS VI series with a super junction structure. This innovative technology empowers these MOSFETs to deliver exceptional performance and efficiency in demanding switching power supply applications.
Enhanced Reverse Recovery Characteristics for Optimal Bridge and Inverter Circuits
The new power MOSFETs utilize intrinsic high-speed diodes to achieve significant improvements in reverse recovery characteristics. This translates to superior performance in bridge and inverter circuit applications. Compared to standard DTMOS VI products, the TK042N65Z5 and TK095N65Z5 boast a remarkable 65% reduction in reverse recovery time (trr), with values as low as 160 ns and 115 ns, respectively. Additionally, these new products demonstrate an impressive 88% reduction in reverse recovery charge (Qrr) and up to a 90% decrease in drain cut-off current at high temperatures (TK042N65Z5) when compared to Toshiba's standard MOSFETs.
Reduced Power Loss for Enhanced Efficiency
These advancements collectively contribute to a significant reduction in the key figure of merit (FoM) of "drain-source On-resistance × gate-drain charge" (RDS(ON) * Qgd). This FoM reduction is approximately 72% lower compared to Toshiba's existing TK62N60W5. The resulting decrease in power losses translates to improved efficiency in power supply equipment. For instance, in a 1.5 kW LLC circuit, the TK042N65Z5 demonstrates a power supply efficiency improvement of around 0.4% over the previous TK62N60W5.
Exceptional Performance and Compact Design
The TK042N65Z5 and TK095N65Z5 offer exceptional performance with low RDS(ON) values of 42 mΩ and 95 mΩ, respectively. These devices are capable of delivering high drain currents (ID) of up to 55 A and 29 A. Despite their remarkable performance, both MOSFETs come housed in a compact TO-247 package, ensuring optimal space utilization within power supply designs.
Comprehensive Design Support for Optimal Implementation
Toshiba Electronics offers a new reference design for an upgraded 1.6 kW server power supply specifically designed for the TK095N65Z5 device. Furthermore, they provide a suite of valuable design tools to assist engineers in creating high-performance switching power supplies. This includes both G0 SPICE models for rapid circuit function verification and highly accurate G2 SPICE models for precise transient characteristic reproduction.
BonChip Electronics: Your Partner for Toshiba Power MOSFET Solutions
BonChip Electronics is your trusted distributor for Toshiba's complete line of power MOSFETs, including the new TK042N65Z5 and TK095N65Z5. We offer exceptional technical support to assist you in selecting the optimal MOSFET solution for your specific switching power supply application. Experience the performance, efficiency, and design support advantages of Toshiba's latest-generation DTMOS VI power MOSFETs from BonChip Electronics.
