ROHM Introduces 100 V Schottky Barrier Diodes for High Speed Switching Applications
ROHM has developed 100 V breakdown Schottky barrier diodes (SBDs) that deliver industry-leading reverse recovery time (trr) for power supply and protection circuits in automotive, industrial, and consumer applications.
Although numerous types of diodes exist, highly efficient SBDs are increasingly being used in a variety of applications. Particularly SBDs with a trench MOS structure that provide lower VF than planar types enable higher efficiency in rectification applications. One drawback of trench MOS structures, however, is that they typically feature worse trr than planar topologies - resulting in higher power loss when used for switching.
In response, ROHM developed a new series utilizing a proprietary trench MOS structure that simultaneously reduces both VF and IR (which are in a trade-off relationship) while also achieving class-leading trr.
Expanding on the four existing conventional SBD lineups optimized for a variety of requirements, the YQ series is ROHM’s first to adopt a trench MOS structure. The proprietary design achieves class-leading trr of 15 ns that reduces trr loss by approx. 37% and overall switching loss by approx. 26% over general trench-type MOS products, contributing to lower application power consumption. The new structure also improves both VF and IR loss compared to conventional planar-type SBDs. This results in lower power loss when used in forward bias applications such as rectification, while also providing less risk of thermal runaway which is a major concern with SBDs. As such, they are ideal for sets requiring high-speed switching, such as drive circuits for automotive LED headlamps and DC-DC converters in xEVs that are prone to generate heat.
Going forward, ROHM will strive to further improve the quality of its semiconductor devices, from low to high voltages, while strengthening its expansive lineup to further reduce power consumption and achieve greater miniaturization.
SBD Trench MOS Structure
The trench MOS structure is created by forming a trench using polysilicon in the epitaxial wafer layer to mitigate electric field concentration. This reduces the resistance of the epitaxial wafer layer, achieving lower VF when applying voltage in the forward direction. At the same time, during reverse bias the electric field concentration is minimized, significantly decreasing IR. As a result, the YQ series improves VF and IR by approximately 7% and 82%, respectively, compared to conventional products.
Unlike typical trench MOS structures where trr is worse than planar types due to larger parasitic capacitance (resistance component in the device), the YQ series achieves an industry-leading trr of 15 ns by adopting a unique structural design. This allows switching losses to be reduced by approximately 26%, contributing to lower application power consumption.
Key applications
- Automotive LED headlamps
- xEV DC-DC converters
- Power supplies for industrial equipment
- Lighting
Product lineup
Click here to learn more about YQ1VWM10ATR
BonChip Electronics, a leading specialty distributor of all categories of electronic components, is pleased to announce the recent introduction of ROHM's new line of 100-V Schottky Barrier Diodes. These diodes, designed for high-speed switching applications, represent a significant advancement in the field of power electronics.
Known for their expertise in sourcing and distributing the latest and most innovative electronic components, BonChip Electronics is excited to offer these new diodes to their customers. The Schottky Barrier Diodes from ROHM are noted for their excellent switching characteristics and low forward voltage drop, making them ideal for use in high-frequency circuits and power supplies.
The demand for high-performance diodes continues to grow as the electronics industry pushes the boundaries of what is possible. With the introduction of these new 100-V Schottky Barrier Diodes, ROHM has once again demonstrated their commitment to meeting the needs of designers and engineers who require the best possible components for their cutting-edge projects.
As a trusted partner to the electronics industry, BonChip Electronics is dedicated to staying at the forefront of technology and offering their customers the latest and greatest products available. With the addition of ROHM's 100-V Schottky Barrier Diodes to their already extensive product line, they are well-positioned to continue providing their customers with the high-quality components they need to bring their innovative designs to life.
