Mitsubishi Electric Set to Reveal New Silicon Carbide and Silicon Power Modules Designed for Electric Vehicles
Mitsubishi Electric Corporation is gearing up to introduce a suite of advanced J3-Series power semiconductor modules tailored for the electric vehicle market, including six new models that integrate either cutting-edge silicon carbide (SiC-MOSFET) or robust RC-IGBT (Si) technologies. These modules are meticulously designed to be compact and scalable, catering specifically to the inverter requirements of electric vehicles (EVs) and plug-in hybrid electric vehicles (PHEVs). Set for sample distribution starting March 25th, these innovations are poised to redefine power conversion efficiency in the xEV arena.
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These pioneering power modules will make their debut at the 38th Electronics R&D, Manufacturing and Packaging Technology Expo (NEPCON JAPAN 2024), from January 24 to 26 at Tokyo Big Sight in Japan, and are slated to be showcased at subsequent exhibitions in North America, Europe, China, among other locations.
Against the backdrop of global decarbonization efforts, there is a growing market for power semiconductors that can convert electricity with high efficiency, wherein SiC power semiconductors stand out due to their significantly reduced power loss. In the realm of xEVs, such modules are integral to power conversion devices like inverters that drive xEV motors. Beyond augmenting the driving range, there's an industry-wide pursuit for modules that are both high-powered and high-efficiency, to enable further miniaturization of batteries and inverters. Yet, the elevated safety standards demanded of xEVs necessitate unparalleled reliability in the power semiconductors destined for drive motors, surpassing those of general industrial applications.
Japan's New Energy and Industrial Technology Development Organization (NEDO) has played a supportive role in the development of these SiC innovations, contributing to the evolution of energy-efficient and reliable solutions for the electric vehicle industry.
