Transphorm Launches Innovative GaN Transistors Tailored for Enhanced Power Conversion in High Power Servers and Industrial Applications
Transphorm, a trailblazer in durable GaN power semiconductors, has unveiled two cutting-edge SuperGaN FETs packaged in a TO-247-4L (4-lead TO-247) design. These new additions, identified as TP65H035G4YS and TP65H050G4YS, boast on resistances of 35 mΩ and 50 mΩ, alongside a kelvin-source feature that empowers users to achieve heightened switching dexterity and reduced power dissipation. Leveraging Transphorm's proven GaN-on-Silicon fabrication technology, these products merge affordability with the dependability required for mass production on established silicon lines. The TP65H050G4YS with 50 mΩ is currently on the market, while its counterpart, the 35 mΩ TP65H035G4YS, is undergoing sampling with a market launch projected for the first quarter of 2024.
Designed to either enhance new power systems or seamlessly supplant existing 4-lead silicon and SiC components, Transphorm's SuperGaN 4-lead models are engineered for power supplies exceeding 1 kilowatt in various sectors, including data centers, renewable energy systems, and a plethora of industrial uses. The specialized 4-lead layout introduces an added dimension of adaptability, which is evident through its performance; the 35 mΩ unit demonstrated a reduction in energy losses—15 percent at a frequency of 50 kHz and 27 percent at 100 kHz when juxtaposed with a SiC MOSFET of similar resistance in testing with a hard-switched synchronous boost converter.
Transphorm’s SuperGaN FETs are known for delivering differentiating advantages such as:
- Industry-leading robustness with a +/- 20 V gate threshold and a 4 V noise immunity.
- Easier designability by reducing the amount of circuitry required around the device.
- Easier drivability as FETs can pair with well-known, off-the-shelf drivers common to silicon devices.
The TO-247-4L devices offer the same robustness, designability, and drivability with the following core specifications:
Part Number | Vds (V) min | Rds(on) (mΩ) typ | Vth (V) typ | Id (25°C) (A) max | Package Variation |
650 | 35 | 3.6 | 46.5 | Source | |
650 | 50 | 4 | 35 | Source |
“We continue to expand our product portfolio to bring to market GaN FETs that help customers leverage our SuperGaN platform performance advantages in whatever design requirement they may have,” said Philip Zuk, Senior Vice President of Business Development and Marketing, at Transphorm. “The four-lead TO-247 package provides flexibility for designers and customers seeking even greater power system loss reductions with little to no design modifications on silicon or silicon carbide systems. It’s an important addition to our product line as we ramp into higher power applications.”
